Semiconductor device and method for its fabrication

Details Semiconductor device and method for its fabrication Semiconductor device and method for its fabrication

1998-11-30

2000-08-29

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257299, 257345, 257500, H01L 2702, H01L 2908

Patent

active

061112941

ABSTRACT:
A semiconductor device has a semiconductor substrate of a first conductivity type. A first well of a second conductivity type is disposed in the semiconductor substrate. A second well of the first conductivity type is disposed in the first well. A third well of the second conductivity is disposed in the second well. A MOS transistor having a source region and a drain region of the first conductivity type is disposed in the third well.

REFERENCES:
patent: 4138782 (1979-02-01), De la Moneada et al.
patent: 5321293 (1994-06-01), Mojaradi et al.
patent: 5336915 (1994-08-01), Fujita et al.
patent: 5708290 (1998-01-01), Cacciola et al.
K. Hoffmann: "VLSI-Entwurf", 2.sup.nd edition, 1993, pp. 404-405.

Affiliated with

Also associated with

Rating

Semiconductor device and method for its fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for its fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for its fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1252676