Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-08-16
2011-08-16
Clark, S. V (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S696000
Reexamination Certificate
active
07998870
ABSTRACT:
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a plurality of bit lines having a uniform width on a semiconductor substrate, an active region obliquely arranged to have a predetermined angle with respect to the bit lines, a spacer arranged around the bit lines connected to a center part of the active region. A contact pad is connected to a lower part of the bit lines. The spacer is formed not only at an upper part of sidewalls of the contact pad but also at sidewalls of the bit lines. As a result, a CD of the bit line contact increases, so that a bit line contact patterning margin also increases. A bit line pattern having a uniform width is formed so that a patterning margin increases. A storage electrode contact self-alignment margin increases so that a line-type storage electrode contact margin increases.
REFERENCES:
patent: 2008/0042182 (2008-02-01), Park
patent: 2008/0142474 (2008-06-01), Kim et al.
patent: 2008/0160740 (2008-07-01), Ahn et al.
patent: 2009/0085083 (2009-04-01), Shin
patent: 2010/0227463 (2010-09-01), Cho
Clark S. V
Hynix / Semiconductor Inc.
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