Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-03-25
1995-11-21
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257308, 257406, 257411, 257640, H01L 2934, H01L 2186
Patent
active
054689872
ABSTRACT:
In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate eiectrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate eiectrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the eiement can be improved. In addition, a contact is formed in no consideration of the concept "contact hole".
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Takamura Yasuhiko
Yamazaki Shunpei
Zhang Hongyong
Abraham Fetsum
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Sikes William L.
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