Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

2005-01-25

2010-12-21

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C257SE21413

Reexamination Certificate

active

07855106

ABSTRACT:
An improved type thin film semiconductor device and a method for forming the same are described. That is, in a thin film semiconductor device such as TFT formed on an insulating substrate, it is possible to prevent the intrusion of a mobile ion from a substrate or other parts, by forming the first blocking film comprising a silicon nitride, an aluminum oxide, an aluminum nitride, a tantalum oxide, and the like, under the semiconductor device through an insulating film used in a buffering, and then, by forming the second blocking film on TFT, and further, by covering TFT with said first and second blocking films.

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