Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

2007-07-09

2009-08-11

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

C257S347000, C257S627000, C257SE21320, C257SE21051, C257SE21229, C257SE21571, C257SE21014

Reexamination Certificate

active

07573123

ABSTRACT:
Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.

REFERENCES:
patent: 7098477 (2006-08-01), Zhu et al.
patent: 7148541 (2006-12-01), Park et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2000-0003945 (2000-01-01), None
patent: 10-2005-0006836 (2005-01-01), None
English language abstract of Korean Publication No. 2000-0003945.
English language abstract of Korean Publication No. 10-2005-0006836.

Affiliated with

Also associated with

Rating

Semiconductor device and method for forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4056851