Semiconductor device and method for forming pattern in the same

Details Semiconductor device and method for forming pattern in the same Semiconductor device and method for forming pattern in the same

2007-06-08

2009-06-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S739000, C438S771000

Reexamination Certificate

active

07550384

ABSTRACT:
A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate and a second hard mask layer over the first hard mask layer, selectively etching the second hard mask layer and the first hard mask layer by using a line/space mask as an etching mask to form a second hard mask layer pattern and a first hard mask layer pattern, forming an insulating film filling the second hard mask layer pattern and the first hard mask layer pattern, selectively etching the second hard mask layer and its underlying first hard mask layer pattern by using the insulating film as an etching mask to form a fourth hard mask layer pattern overlying a third hard mask layer pattern, removing the insulating film and the fourth hard mask layer pattern, and patterning the semiconductor substrate by using the third hard mask layer pattern as an etching mask, to form a fine pattern.

REFERENCES:
patent: 2002/0096490 (2002-07-01), Yu
patent: 2006/0068547 (2006-03-01), Lee et al.
patent: 2007/0077748 (2007-04-01), Olligs et al.
patent: 2008/0017889 (2008-01-01), Koh et al.
patent: 10-1996-0042911 (1996-12-01), None
patent: 10-2004-0019652 (2004-03-01), None

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