Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
1998-03-04
2002-04-16
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S341000
Reexamination Certificate
active
06373100
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates, in general, to semiconductor devices and, more particularly, to vertical semiconductor devices.
Vertical semiconductor devices such as, for example, vertically diffused field effect transistors are commonly used as high power devices in electronic circuits. A conventional vertically diffused field effect transistor usually has its gate electrode and source electrode on the front side of a semiconductor die on which the transistor is fabricated. The drain electrode of the transistor is typically on the back side of the die. Inter-chip or inter-die wiring is conventionally used for coupling the drain electrode of the transistor to other elements in the circuit. The inter-chip wiring requires back side metal plating and wire bonding, which are complicated and expensive. As the complexity of the circuit increases, the number and complexity of the interconnections between different dies in the circuit also increase. Consequently, the inter-chip wiring process becomes increasingly expensive and increasingly difficult to perform.
Accordingly, it would be advantageous to have a vertical semiconductor device on a chip and a method for fabricating the device, so that the device can be coupled to an off-chip circuit element without wire-bonding to the back side of the chip. It is desirable for the device to be compatible with a simple and cost efficient packaging process. It is also desirable for the device and the interconnection between the device and other circuit elements in a circuit to be simple, reliable, and cost efficient. It would be of further advantage for the method for fabricating the device to be simple and compatible with existing semiconductor device fabricating processes.
REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 3617826 (1971-11-01), Kobayashi
patent: 4377031 (1983-03-01), Goto et al.
patent: 4636653 (1987-01-01), Hsu
patent: 4853342 (1989-08-01), Taka et al.
patent: 5155562 (1992-10-01), Tsuchiya
patent: 5342797 (1994-08-01), Sapp et al.
patent: 5374846 (1994-12-01), Takemura
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5455190 (1995-10-01), Hsu
patent: 5455448 (1995-10-01), Benjamin
patent: 5463241 (1995-10-01), Kubo
patent: 5475243 (1995-12-01), Saito
patent: 5489799 (1996-02-01), Zambrano et al.
patent: 5807783 (1998-09-01), Gaul et al.
patent: 2243717 (1991-06-01), None
patent: 5561063 (1980-05-01), None
patent: 6092662 (1985-05-01), None
de Fresart Edouard
Nguyen Quang X.
Pages Irenee M.
Pearse Jeffrey
Thoma Rainer
Semiconductor Components Industries LLC
Trinh Michael
LandOfFree
Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2852718