Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2011-07-05

2011-07-05

Wilson, Scott (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C977S708000, C977S724000, C977S732000, C257S467000, C257SE27008, C438S050000, C438S054000

Reexamination Certificate

active

07973374

ABSTRACT:
Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a metal film spaced from a semiconductor substrate at a predetermined interval and in which a plurality of etching holes are formed. A bottom metal pattern disposed on and/or over a space between the semiconductor substrate and metal film and top metal pattern formed on and/or over the bottom metal pattern may be provided. A pillar may be formed on and/or over the semiconductor substrate and may support one side of a low surface of the bottom metal pattern. A pad may be formed on and/or over the semiconductor substrate, and an air layer corresponding to the bottom metal pattern may be inserted therein. According to embodiments, a pyro-electric switch transistor using a bi-metal with different coefficients of thermal expansion may be provided.

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