Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2011-04-12

2011-04-12

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S332000, C257SE29201, C438S156000

Reexamination Certificate

active

07923775

ABSTRACT:
A semiconductor device includes a plurality of trench patterns formed over a substrate; gate insulation layers formed over sidewalls of the trench patterns; gate electrodes formed over the trench patterns; line patterns coupling the gate electrodes; and source and drain regions formed in upper and lower portions of the substrate adjacent to the sidewalls of the trench patterns.

REFERENCES:
patent: 5208657 (1993-05-01), Chatterjee et al.
patent: 6952033 (2005-10-01), Kianian et al.
patent: 2006/0172483 (2006-08-01), Forbes
patent: 101043024 (2007-09-01), None
patent: 2006-173429 (2006-06-01), None
patent: 2007-110110 (2007-04-01), None
patent: 1020050091500 (2005-09-01), None
patent: 1020060023308 (2006-03-01), None
Office Action dated Jan. 21, 2010, for Korean application No. 10-2008-0030163, citing the above references.
Translation of Chinese Office Action for Chinese patent application No. 200910000358.3, citing the attached references.
Korean Notice of Allowance for Korean application No. 10-2008-0030163, citing the attached references.

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