Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1997-10-16

1999-10-26

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257387, 257401, 257408, H01L 2968, H01L 2978

Patent

active

059733624

ABSTRACT:
A semiconductor device which is applied to access transistors of an SRAM cell to improve its operation performance and a method for fabricating the same are disclosed. The semiconductor device includes a gate insulating layer formed on a semiconductor substrate, a gate electrode formed on the gate insulating layer, lightly doped impurity regions having different lengths beneath surface of the semiconductor substrate at first and second sides of the gate electrode, and heavily doped impurity regions formed beneath the surface of the semiconductor substrate, extending from the lightly doped impurity regions.

REFERENCES:
patent: 5276344 (1994-01-01), Arima et al.
patent: 5436482 (1995-07-01), Ogoh
patent: 5780911 (1998-07-01), Park et al.
patent: 5789780 (1998-08-01), Fulford, Jr. et al.

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