Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-17
2011-05-17
Ho, Hoang-Quan T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S770000, C257SE29159, C257SE21635, C438S199000, C438S212000, C438S218000, C438S270000, C438S588000, C438S589000
Reexamination Certificate
active
07944005
ABSTRACT:
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, active regions of the semiconductor substrate defined by a device isolation structure formed in the semiconductor substrate, the active regions including an NMOS active region defined in the NMOS region and a PMOS active region defined in the PMOS region, a gate insulating film disposed over the active regions, and a dual poly gate including an amorphous titanium layer formed over the gate insulating film in the NMOS region and the PMOS region. The dual poly gate includes a stacked structure having a lower gate electrode formed of an impurity doped polysilicon layer, a barrier layer including the amorphous titanium layer, and an upper gate electrode formed of a tungsten layer.
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Ho Hoang-Quan T
Hynix / Semiconductor Inc.
IP & T Group LLP
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