Semiconductor device and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S369000, C257S770000, C257SE29159, C257SE21635, C438S199000, C438S212000, C438S218000, C438S270000, C438S588000, C438S589000

Reexamination Certificate

active

07944005

ABSTRACT:
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, active regions of the semiconductor substrate defined by a device isolation structure formed in the semiconductor substrate, the active regions including an NMOS active region defined in the NMOS region and a PMOS active region defined in the PMOS region, a gate insulating film disposed over the active regions, and a dual poly gate including an amorphous titanium layer formed over the gate insulating film in the NMOS region and the PMOS region. The dual poly gate includes a stacked structure having a lower gate electrode formed of an impurity doped polysilicon layer, a barrier layer including the amorphous titanium layer, and an upper gate electrode formed of a tungsten layer.

REFERENCES:
patent: 5545925 (1996-08-01), Hanaoka
patent: 5877074 (1999-03-01), Jeng et al.
patent: 6921711 (2005-07-01), Cabral et al.
patent: 7285485 (2007-10-01), Chun et al.
patent: 2001/0036728 (2001-11-01), Shinmura et al.
patent: 2007/0018220 (2007-01-01), Lee et al.
patent: 2009/0134465 (2009-05-01), Shimizu

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