Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2011-07-12

2011-07-12

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S668000, C257S774000, C257SE21573, C257SE21581

Reexamination Certificate

active

07977239

ABSTRACT:
A semiconductor device includes: a first insulation film formed over a semiconductor substrate; and a plurality of first interconnects selectively formed in the first insulation film. A plurality of gaps are formed in part of the first insulation film located between adjacent ones of the first interconnects so that each of the gaps has a cylindrical shape extending vertically to a principal surface of the semiconductor substrate. A cap film is formed of metal or a material containing metal in upper part of each of the first interconnects.

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