Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2009-12-27

2011-12-27

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S335000, C257SE29256, C257SE29261, C257SE21417

Reexamination Certificate

active

08084817

ABSTRACT:
A semiconductor device includes a high voltage first conduction type well in a semiconductor substrate, a second conduction type body in the high voltage first conduction type well, a source region in the second conduction type body, a trench in the high voltage first conduction type well, a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide stacked in the trench in succession, a drain region in the high voltage first conduction type well on one side of the trench, and a polygate on and/or over the high voltage first conduction type well.

REFERENCES:
patent: 2001/0023961 (2001-09-01), Hshieh et al.
patent: 2005/0082610 (2005-04-01), Shibib et al.
patent: 2008/0251863 (2008-10-01), Huang et al.
patent: 2009/0283825 (2009-11-01), Wang et al.
patent: 2010/0102388 (2010-04-01), Levin et al.
patent: 2011/0024836 (2011-02-01), Zinn

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