Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2009-11-18

2011-11-29

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S369000, C257S413000

Reexamination Certificate

active

08067791

ABSTRACT:
A semiconductor device formed by the steps of: forming a dummy electrode22nand a dummy electrode22p; forming a metal film32on the dummy electrode22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode22nwith an electrode34aof a material containing the constituent material of the metal film32; forming a metal film36on the dummy electrode22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode34aand the metal film36does not take place, to substitute the second dummy electrode with an electrode34bof a material containing the constituent material of the metal film36.

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Prior Art Information List associated with Item 3.

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