Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2009-07-06

2011-11-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE21409, C257SE29025, C257SE29040, C257SE29116, C438S197000

Reexamination Certificate

active

08049279

ABSTRACT:
A semiconductor device includes a substrate of a first conductivity type, a first doped region of a second conductivity type, at least one second doped region of the first conductivity type, a third doped region of the second conductivity type, a gate structure, and at least one contact. The first and the second doped regions are configured in the substrate, and each second doped region is surrounded by the first doped region. The third doped region is configured in the substrate outside of the first doped region. The gate structure is disposed on the substrate between the first and third doped regions. The contact is disposed on the substrate. Each contact connects, in a direction parallel to the gate structure, the first and second doped regions alternately.

REFERENCES:
patent: 4213140 (1980-07-01), Okabe et al.
patent: 4841486 (1989-06-01), Minato et al.
patent: 4849801 (1989-07-01), Honjyo et al.
patent: 5239505 (1993-08-01), Fazio et al.

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