Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-12-26

2011-10-18

Monbleau, Davienne (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S401000, C257S413000, C257SE29128, C257SE29134, C257SE29156

Reexamination Certificate

active

08039907

ABSTRACT:
A transistor, comprising a first gate structure formed on a substrate, and having a stacked structure of a first gate electrode and a first gate hard mask, a first gate spacer formed on sidewalls of the first gate structure, a second gate structure having a stacked structure of a second gate electrode and a second gate hard mask, the second gate structure surrounding both sidewalls and top surfaces of the first gate structure and the first gate spacer, and a second gate spacer formed on sidewalls of the second gate structure.

REFERENCES:
patent: 6548862 (2003-04-01), Ryu et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2002/0019107 (2002-02-01), Lin et al.
patent: 2003/0042568 (2003-03-01), Jang
patent: 2004/0183125 (2004-09-01), Hofmann et al.
patent: 2004/0188753 (2004-09-01), Kawashima et al.
patent: 10-1998-0067670 (1998-10-01), None
patent: 10-2006-0110985 (2005-10-01), None

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