Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-06-29

2010-11-30

Such, Matthew W (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S665000, C257SE21585

Reexamination Certificate

active

07842593

ABSTRACT:
A method for fabricating a semiconductor device includes forming a recess gate over a semiconductor substrate. A gate spacer is formed on a sidewall of the recess gate. The semiconductor substrate in a landing plug contact region is soft-etched to form a recess having a rounded profile. A sidewall spacer is formed over the gate spacer and a sidewall of the recess. An insulating film is formed over the semiconductor substrate. The insulating film is selectively etched to form a landing plug contact hole. A conductive layer in the landing plug contact hole is filled to form a landing plug.

REFERENCES:
patent: 6159850 (2000-12-01), Lee et al.
patent: 6479377 (2002-11-01), Tang et al.
patent: 6573168 (2003-06-01), Kim et al.
patent: 6723655 (2004-04-01), Park et al.
patent: 6881650 (2005-04-01), Lee et al.
patent: 6881659 (2005-04-01), Park et al.
patent: 7229893 (2007-06-01), Wang et al.
patent: 2006/0030095 (2006-02-01), Goh et al.
patent: 2006/0138477 (2006-06-01), Suh
patent: 2006/0183320 (2006-08-01), Cha et al.
patent: 2006/0208282 (2006-09-01), Tran et al.
patent: 2007/0275555 (2007-11-01), Kim
patent: 1674255 (2005-09-01), None
patent: 1725507 (2006-01-01), None
patent: 1794467 (2006-06-01), None
patent: 10 2005 0042350 (2005-05-01), None
patent: 10 2005 0045715 (2005-05-01), None
patent: 10 2006 0074994 (2006-07-01), None
patent: 10 2006 0127515 (2006-12-01), None
First Office Action for Chinese Application No. 200710130156.1, dated Jun. 5, 2009.

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4252572