Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-07-14
2010-12-21
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE27111, C257SE29137
Reexamination Certificate
active
07855380
ABSTRACT:
The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
REFERENCES:
patent: 5153690 (1992-10-01), Tsukada et al.
patent: 5245207 (1993-09-01), Mikoshiba et al.
patent: 5247190 (1993-09-01), Friend et al.
patent: 5266825 (1993-11-01), Tsukada et al.
patent: 5343063 (1994-08-01), Yuan et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5402254 (1995-03-01), Sasano et al.
patent: 5583067 (1996-12-01), Sanchez
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5620910 (1997-04-01), Teramoto
patent: 5623157 (1997-04-01), Miyazaki et al.
patent: 5627084 (1997-05-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5671027 (1997-09-01), Sasano et al.
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 5767930 (1998-06-01), Kobayashi et al.
patent: 5793460 (1998-08-01), Yang
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5913100 (1999-06-01), Kohsaka et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5939731 (1999-08-01), Yamazaki et al.
patent: 6049092 (2000-04-01), Konuma et al.
patent: 6067132 (2000-05-01), Kim
patent: 6146930 (2000-11-01), Kobayashi et al.
patent: 6150692 (2000-11-01), Iwanaga et al.
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 6200694 (2001-03-01), Kohsaka et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6271573 (2001-08-01), Suguro
patent: 6323068 (2001-11-01), Seo
patent: 6399988 (2002-06-01), Yamazaki
patent: 6429086 (2002-08-01), Meikle et al.
patent: 6469317 (2002-10-01), Yamazaki et al.
patent: 6489632 (2002-12-01), Yamazaki et al.
patent: 6504215 (2003-01-01), Yamanaka et al.
patent: 6531713 (2003-03-01), Yamazaki
patent: 6534826 (2003-03-01), Yamazaki
patent: 6558993 (2003-05-01), Ohtani et al.
patent: 6569717 (2003-05-01), Murade
patent: 6573564 (2003-06-01), Yamazaki et al.
patent: 6576926 (2003-06-01), Yamazaki et al.
patent: 6579736 (2003-06-01), Yamazaki
patent: 6593592 (2003-07-01), Yamazaki et al.
patent: 6614083 (2003-09-01), Yamazaki et al.
patent: 6753257 (2004-06-01), Yamazaki
patent: 6770936 (2004-08-01), Inoue et al.
patent: 6777255 (2004-08-01), Yamazaki
patent: 6867431 (2005-03-01), Konuma et al.
patent: 6933571 (2005-08-01), Inoue et al.
patent: 6936844 (2005-08-01), Yamazaki et al.
patent: 6995432 (2006-02-01), Yamazaki et al.
patent: 7015141 (2006-03-01), Yamazaki
patent: 7049634 (2006-05-01), Yamazaki
patent: 7153589 (2006-12-01), Kohsaka et al.
patent: 7381599 (2008-06-01), Konuma et al.
patent: 7408233 (2008-08-01), Yamazaki et al.
patent: 7525158 (2009-04-01), Konuma et al.
patent: 7569856 (2009-08-01), Konuma et al.
patent: 2001/0025960 (2001-10-01), Ohtani et al.
patent: 2001/0038097 (2001-11-01), Inoue
patent: 2002/0163457 (2002-11-01), Azami et al.
patent: 2003/0027380 (2003-02-01), Yamazaki
patent: 2006/0226430 (2006-10-01), Yamazaki
patent: 2007/0224791 (2007-09-01), Takayama et al.
patent: 2009/0289254 (2009-11-01), Konuma et al.
patent: 1123465 (1996-05-01), None
patent: 0 582 486 (1994-02-01), None
patent: 0 602 250 (1994-06-01), None
patent: 0 645 802 (1995-03-01), None
patent: 0 697 714 (1996-02-01), None
patent: 0 735 152 (1996-10-01), None
patent: 0 947 593 (1999-10-01), None
patent: 1 564 799 (2005-08-01), None
patent: 1 564 800 (2005-08-01), None
patent: 2 243 948 (1991-11-01), None
patent: 4-26825 (1992-01-01), None
patent: 6-13605 (1994-01-01), None
patent: 6-260499 (1994-09-01), None
patent: 6-267982 (1994-09-01), None
patent: 07-130652 (1995-05-01), None
patent: 7-169974 (1995-07-01), None
patent: 7-263705 (1995-10-01), None
patent: 8-64838 (1996-03-01), None
patent: 8-125193 (1996-05-01), None
patent: 8-293604 (1996-11-01), None
patent: 09-260629 (1997-10-01), None
patent: 10-092576 (1998-04-01), None
patent: 10-96962 (1998-04-01), None
patent: 10-233505 (1998-09-01), None
patent: 10-319431 (1998-12-01), None
patent: 10-326899 (1998-12-01), None
patent: 10-335334 (1998-12-01), None
patent: 11-97707 (1999-04-01), None
patent: 11-194366 (1999-07-01), None
patent: 11284200 (1999-10-01), None
patent: WO 90/13148 (1990-11-01), None
patent: WO 95/16797 (1995-06-01), None
patent: WO 97/08752 (1997-03-01), None
patent: WO 98/15973 (1998-04-01), None
Schenk, H. et al, “Polymers for Light Emitting Diodes,” EURODISPLAY '99, Proceedings of the 19th International Display Research Conference, Sep. 6-9, Berlin, Germany, pp. 33-37, (1999).
U.S. Appl. No. 09/528,113 (pending) to Yamazaki et al, including specification, claims, abstract, drawings, and PTO filing receipt.
U.S. Appl. No. 09/533,040 (pending) to Yamazaki, including specification, claims, abstract, drawings, allowed claims and PTO filing receipt.
U.S. Appl. No. 09/559,185 (pending) to Yamazaki, including specification, claims, abstract, drawings, pending claims (as of Apr. 9, 2002), and PTO filing receipt.
European Search Report re application No. EP 00107789.0, dated Jul. 4, 2006.
Preliminary Amendment of U.S. Appl. No. 11/438,939, filed Nov. 3, 2006.
Office Action re Chinese patent application No. CN 200610073781.2, dated Apr. 4, 2008 (with English translation).
Office Action re Chinese patent application No. CN 200610103002.9, dated May 23, 2008 (with English translation).
Hamatani Toshiji
Koyama Jun
Takayama Toru
Yamazaki Shunpei
Dickey Thomas L
Erdem Fazli
Husch Blackwell LLP Welsh & Katz
Semiconductor Energy Laboratory Co,. Ltd.
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