Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-12-18
2010-12-07
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S571000, C438S597000, C438S660000, C438S663000
Reexamination Certificate
active
07846828
ABSTRACT:
Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.
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Hagio Masahiro
Kitabatake Makoto
Kusumoto Osamu
Sawada Kazuyuki
Takahashi Kunimasa
McDermott Will & Emery LLP
Panasonic Corporation
Taylor Earl N
Vu David
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