Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2008-06-18

2010-11-30

Thai, Luan C (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S536000, C257S350000, C257SE21431, C257SE21438, C257SE27016

Reexamination Certificate

active

07843013

ABSTRACT:
A semiconductor device includes: an isolation region formed in a semiconductor substrate; active regions surrounded by the isolation region and including p-type and n-type regions, respectively; an NMOS transistor formed in the active region including the p-type region and including an n-type gate electrode; a PMOS transistor formed in the active region including the n-type region and including a p-type gate electrode; and a p-type resistor formed on the isolation region. The p-type resistor has an internal stress greater than that of the p-type gate electrode.

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Ota, K. et al., “Novel Locally Strained Channel Technique for High Performance 55nm CMOS,” IDEM 2002, p. 27.
Ortolland, C. et al., “Stress Memorization Technique (SMT) Optimization for 45nm CMOS,”VLSI 2006, pp. 96-97.

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