Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-19
2010-06-22
Andújar, Leonardo (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S412000, C257SE21625
Reexamination Certificate
active
07741684
ABSTRACT:
The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy(0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.
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Japanese Office Action mailed Nov. 10, 2009, issued in corresponding Japanese Application No. 2005-364379.
Minakata Hiroshi
Miyagaki Shinji
Tamura Yasuyuki
Yamaguchi Masaomi
Yoshida Chikako
Andújar Leonardo
Fujitsu Limited
Harrison Monica D
Westerman Hattori Daniels & Adrian LLP
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