Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2008-09-30

2010-12-14

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257SE27062, C257SE27065

Reexamination Certificate

active

07851871

ABSTRACT:
A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.

REFERENCES:
patent: 4394674 (1983-07-01), Sakuma et al.
patent: 4818719 (1989-04-01), Yeh et al.
patent: 5128823 (1992-07-01), Fujimoto et al.
patent: 6017797 (2000-01-01), Furukawa
patent: 6137140 (2000-10-01), Efland et al.
patent: 6198131 (2001-03-01), Tung
patent: 6222235 (2001-04-01), Kojima et al.
patent: 7282410 (2007-10-01), Lu et al.
patent: 2001/0025961 (2001-10-01), Nakamura et al.
patent: 2002/0047176 (2002-04-01), Takahashi
patent: 2004/0108544 (2004-06-01), Hossain et al.
patent: 2009/0194815 (2009-08-01), Choi et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4152617