Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-10
2009-12-01
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21410, C257SE29262
Reexamination Certificate
active
07626229
ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a first semiconductor region formed in the reverse surface region of the semiconductor substrate and including a first conductivity type impurity; a second semiconductor region formed on the first semiconductor region in the semiconductor substrate and including a second conductivity type impurity; a third semiconductor region formed on the second semiconductor region in the semiconductor substrate and including a first conductivity type impurity; a trench passing through the second and third semiconductor regions and reaching the first semiconductor region; and a gate insulating film formed along the wall face of the trench; a gate electrode formed on the gate insulating film in the trench. Further, a pocket region including a second conductivity type impurity of which peak concentration is higher than that of the second semiconductor region is formed by a side of the trench between the second semiconductor region and the third semiconductor region.
REFERENCES:
patent: 5298780 (1994-03-01), Harada
patent: 6084264 (2000-07-01), Darwish
patent: 6168996 (2001-01-01), Numazawa et al.
patent: 6174773 (2001-01-01), Fujishima
patent: 6624469 (2003-09-01), Harada
patent: 6670658 (2003-12-01), Hattori et al.
patent: 6756273 (2004-06-01), Hadizad et al.
patent: 6979621 (2005-12-01), Hshieh et al.
patent: 7291884 (2007-11-01), Darwish et al.
patent: 2002/0060330 (2002-05-01), Onishi et al.
patent: 2003/0003637 (2003-01-01), Ninomiya
patent: 6-53514 (1994-02-01), None
patent: 09-205204 (1997-08-01), None
patent: 2000-164869 (2000-06-01), None
patent: 2003-017699 (2003-01-01), None
patent: 2004-525500 (2004-08-01), None
patent: 2004-535067 (2004-11-01), None
patent: 2005-210047 (2005-08-01), None
patent: WO 02/27800 (2005-04-01), None
US Office Action for U.S. Appl. No. 11/016,713. Date Mailed: Jun. 7, 2006.
Japanese Office Action issued in Japanese Patent Application No. JP 2004-299698 mailed Apr. 24, 2004.
Japanese Office Action, with English Translation, issued in Corresponding Japanese Patent Application No. 2004-038878, dated on Nov. 6, 2007.
Miyata Satoe
Mizokuchi Shuji
Gurley Lynne A.
Matthews Colleen A
McDermott Will & Emery LLP
Panasonic Corporation
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