Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-13
2009-08-25
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S653000, C427S249150, C257S753000, C257SE21195, C257SE21201
Reexamination Certificate
active
07579277
ABSTRACT:
A semiconductor device in which the diffusion of copper from a wire is prevented and a method for fabricating such a semiconductor device. For example, a via groove and a wire groove are formed in a multilayer structure including a UDC diffusion barrier film, a porous silica film, a middle UDC stopper film, a porous silica film, a UDC diffusion barrier film, and the like, and the surfaces the UDC diffusion barrier film, the middle UDC stopper film, and the UDC diffusion barrier film that get exposed in the via groove and the wire groove are irradiated with hydrogen plasma, thereby making the surface of each exposed SiC film silicon-rich. After the plasma irradiation, a Ta film is formed in the via groove and the wire groove and copper is embedded in these grooves. By making the surface of each SiC film which is to touch the Ta film silicon-rich in advance, the crystal structure of the Ta film can be controlled so that copper cannot pierce through the Ta film. This prevents copper from diffusing from a wire.
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Fukuyama Shun-ichi
Owada Tamotsu
Sakai Hisaya
Everhart Caridad M
Fujitsu Microelectronics Limited
Fujitsu Patent Center
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