Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-10-27

2009-02-24

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S368000, C257S392000, C257S401000, C257S408000

Reexamination Certificate

active

07495295

ABSTRACT:
In a semiconductor device according to the present invention, the power source voltage Vdd1of a core transistor Tr1,the power source voltage Vdd2of an I/O transistor Tr2,and the power source voltage Vdd3of an I/O transistor Tr3satisfy Vdd1<Vdd2<Vdd3.In a method for fabricating the semiconductor device, each of the respective gate insulating films of the I/O transistors Tr2and Tr3is formed in the same step to have the same thickness. Each of the respective SD extension regions of the core transistor Tr1and the I/O transistor Tr2is formed at the same dose.

REFERENCES:
patent: 2001-024168 (2001-01-01), None

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