Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-12-28

2009-08-11

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S303000, C438S587000

Reexamination Certificate

active

07572720

ABSTRACT:
A semiconductor device includes a substrate, first, second, and third gate lines disposed over the substrate, the first and second gate lines defining a first trench with a first aspect ratio, the second and third gate lines defining a second trench with a second aspect ratio, a first insulating layer formed to decrease the first and second aspect ratios, and a second insulating layer disposed over the first insulating layer to fill the first and second trenches.

REFERENCES:
patent: 4672410 (1987-06-01), Miura et al.
patent: 5510639 (1996-04-01), Okuda et al.
patent: 6352888 (2002-03-01), Kim
patent: 6548388 (2003-04-01), Hwang et al.
patent: 2002/0132439 (2002-09-01), Norstrom et al.
patent: 10-2002-0074999 (2002-10-01), None
patent: 10-2004-0059445 (2004-07-01), None

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