Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-10-25

2009-10-13

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S653000, C257S741000, C257S751000, C257SE23165

Reexamination Certificate

active

07601633

ABSTRACT:
A semiconductor device and fabricating method thereof are provided. A carbon interconnection line can be formed on an interlayer insulating layer such that the carbon interconnection line is electrically connected to a conductive metal layer disposed in a contact hole of the semiconductor device.

REFERENCES:
patent: 6762849 (2004-07-01), Rulkens
patent: 7135773 (2006-11-01), Furukawa et al.
patent: 7439081 (2008-10-01), Furukawa et al.
patent: 7465639 (2008-12-01), Pelella et al.
patent: 7473950 (2009-01-01), Fournier
patent: 2007/0122621 (2007-05-01), Kreupl et al.

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