Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-06-01

2008-12-16

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S257000, C438S586000, C257S758000, C257S759000

Reexamination Certificate

active

07465656

ABSTRACT:
A semiconductor device includes a conductive pattern formed on a substrate, a conductive land formed to come into contact with at least part of the top surface of the conductive pattern, and a conductive section formed on the conductive land. The conductive section is electrically connected through the conductive land to the conductive pattern.

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patent: 2001/0032978 (2001-10-01), Hiromi
patent: 2005/0093033 (2005-05-01), Kinoshita et al.
patent: 01-214062 (1989-08-01), None
patent: 2666325 (1997-06-01), None

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