Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2000-04-07
2008-11-25
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S347000, C257S350000, C257S351000, C257S344000, C257SE27111, C257SE29275, C257SE29278
Reexamination Certificate
active
07456430
ABSTRACT:
The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
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Hamatani Toshiji
Koyama Jun
Takayama Toru
Yamazaki Shunpei
Cook Alex Ltd.
Erdem Fazli
Purvis Sue A.
Semiconductor Energy Laboratory Co,. Ltd.
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