Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-08-18

2008-11-18

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S624000, C438S687000, C438S723000, C438S727000, C257SE21024, C257SE21029, C257SE21578

Reexamination Certificate

active

07452795

ABSTRACT:
When a via-hole26and an interconnection trench32are formed in an interconnection films16, 18by using as a mask a hard mask20covering the region except via-hole forming region, and a hard mask22covering the region except an interconnection trench forming region, the hard mask20is isotropically etched to expose the upper surface of the inter-layer insulating film18at a periphery of the via-hole forming region and leave the hard mask20in the interconnection trench forming region except the periphery, and then the hard mask20and the insulating films18, 16are anisotropically etched, whereby the via-hole26having increased-width portion34at the upper part, and the interconnection trench32connected to the via-hole26at the increased-width portions26are formed.

REFERENCES:
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patent: 5976963 (1999-11-01), Cronin et al.
patent: 6764903 (2004-07-01), Chan et al.
patent: 7067419 (2006-06-01), Huang et al.
patent: 7078348 (2006-07-01), Singh et al.
patent: 5-218209 (1993-08-01), None
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patent: 2002-43419 (2002-02-01), None
patent: 2003-197738 (2003-07-01), None
Office Action dated Sep. 14, 2007 issued in corresponding Peoples Republic of China Application No. 200510099963.2.

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