Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2008-01-15

2008-01-15

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S694000, C438S761000, C438S768000, C257S347000, C257S758000

Reexamination Certificate

active

10973391

ABSTRACT:
The semiconductor device comprises a silicon wafer10, a multilayer interconnection12buried in inter-layer insulation film formed on the upper surface of the silicon wafer10, and a silicon nitride film16bwhich is formed on the back surface of the silicon wafer10and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer10by the inter-layer insulation films in which the multilayer interconnection12is buried.

REFERENCES:
patent: 6037634 (2000-03-01), Akiyama
patent: 2004/0198067 (2004-10-01), Tanabe et al.
patent: 2004/0227242 (2004-11-01), Noguchi et al.
patent: 09-064169 (A) (1997-03-01), None
patent: 10-032233 (A) (1998-02-01), None

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