Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-06-26

2007-06-26

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S340000

Reexamination Certificate

active

10781811

ABSTRACT:
The semiconductor device comprises a silicon substrate10having a device region11, a transistor including a gate electrode20formed in the device region11with the gate insulation film14formed therebetween, and a dummy metal layer52formed over the gate electrode20with an inter-layer insulation film32formed therebetween, formed of a metal material having the property of occluding hydrogen and having a peripheral part positioned outer of a region where the region for the gate electrode20formed in and the device region11overlap each other.

REFERENCES:
patent: 3996482 (1976-12-01), Lockwood
patent: 2002/0185664 (2002-12-01), Dixit et al.
patent: 07-074167 (1995-03-01), None
patent: 09-252131 (1997-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3886428