Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-27
2007-11-27
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S404000, C257S408000
Reexamination Certificate
active
11118389
ABSTRACT:
A first doped layer of a conductivity type opposite to that of source/drain regions is formed in a semiconductor substrate under a gate electrode. A second doped layer of the conductivity type opposite to that of the source/drain regions is formed in the semiconductor substrate below the first doped layer. The first doped layer has a first peak in dopant concentration distribution in the depth direction. The first peak is located at a position shallower than the junction depth of the source/drain regions. The second doped layer has a second peak in dopant concentration distribution in the depth direction. The second peak is located at a position deeper than the first peak and shallower than the junction depth of the source/drain regions. The dopant concentration at the first peak is higher than that at the second peak.
REFERENCES:
patent: 6524903 (2003-02-01), Ootsuka et al.
patent: 2002-198529 (2002-07-01), None
Handa Takato
Kurimoto Kazumi
Doan Theresa T
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3854775