Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-21
2007-08-21
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S656000, C438S677000
Reexamination Certificate
active
10930164
ABSTRACT:
A semiconductor device and a method for fabricating the same is disclosed, to prevent a defective contact of a line in a method of completely filling a minute contact hole having a high aspect ratio with a refractory metal layer, which includes the steps of forming a contact hole in an insulating interlayer of a semiconductor substrate; depositing a barrier metal layer on an inner surface of the contact hole and an upper surface of the insulating interlayer, wherein the process of depositing the barrier metal is performed by sequentially progressing one cycle of: injecting a reaction gas of SiH4to the chamber, injecting a first purging gas to the chamber, injecting a reaction gas of WF6to the chamber; injecting a second purging gas to the chamber, injecting a reaction gas of NH3to the chamber, and injecting a third purging gas to the chamber; depositing a first metal layer for nucleation on the barrier metal layer by the atomic layer deposition process; and depositing a second metal layer on the first metal layer inside the contact hole, to fill the contact hole completely.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Toledo Fernando L.
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