Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-11-20

2007-11-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C438S111000, C438S113000, C438S460000, C438S597000, C438S675000, C438S459000, C438S462000, C257SE21502

Reexamination Certificate

active

11024701

ABSTRACT:
A method for fabricating a semiconductor device including forming a depression in a front surface of a semiconductor substrate, forming an electrode pad within the depression, forming structures including circuit devices and metal wires on the front surface of the semiconductor substrate, and exposing the electrode pad by removing a rear surface of the semiconductor substrate.

REFERENCES:
patent: 6001671 (1999-12-01), Fjelstad
patent: 2004/0080040 (2004-04-01), Dotta et al.
http://www.answers.com/dielectric

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3840121