Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-01-30
2007-01-30
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S616000, C257SE29263
Reexamination Certificate
active
10983610
ABSTRACT:
A silicon oxide film102, a Pt film103x, a Ti film104xand a PZT film105xare deposited in this order over a Si substrate101. The Si substrate101is placed in a chamber106so that the PZT film105xis irradiated with an EHF wave108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate101.
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Hara Yoshihiro
Inoue Akira
Kubo Minoru
Takagi Takeshi
Dolan Jennifer M.
Jr. Carl Whitehead
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