Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-06-19

2007-06-19

Huynh, Andy (Department: 2818)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S102000, C257S296000, C257S297000

Reexamination Certificate

active

11058372

ABSTRACT:
A semiconductor device includes a first DRAM section formed on a semiconductor substrate and composed of a plurality of first memory cells and a second DRAM section formed on the semiconductor substrate and composed of a plurality of second memory cells. The operating speed of the first DRAM section is higher than that of the second DRAM section, and the capacitance of each said first memory cell is larger than that of each said second memory cell.

REFERENCES:
patent: 5814547 (1998-09-01), Chang
patent: 5838603 (1998-11-01), Mori et al.
patent: 11-087636 (1999-03-01), None
patent: 2000-232076 (2000-08-01), None
Web Document About Capacitance By Answers.com ( 7 pages ).

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