Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-09-18

2007-09-18

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C438S270000, C438S279000

Reexamination Certificate

active

11261927

ABSTRACT:
The semiconductor device includes a first semiconductor region of a first conductivity type partially extending to a top face of a semiconductor substrate; a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; a fourth semiconductor region of the second conductivity type formed on the second semiconductor region and adjacent to the third semiconductor region; a trench penetrating through the second semiconductor region and the third semiconductor region; a gate insulating film formed on an inner wall of the trench; and a gate electrode formed on the gate insulating film within the trench. The semiconductor device further includes a fifth semiconductor region of the second conductivity type formed on the second semiconductor region to be sandwiched between the fourth semiconductor region and a portion of the first semiconductor region positioned on a side of the fourth semiconductor region. An impurity concentration in the fifth semiconductor region is higher than an impurity concentration in the second semiconductor region.

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 2006/0157780 (2006-07-01), Miyata et al.
patent: 2662217 (1997-06-01), None

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