Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2007-07-24
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S371000, C257S351000
Reexamination Certificate
active
11177576
ABSTRACT:
A semiconductor device includes: a first gate insulating film formed on a first nMOS transistor region in a semiconductor substrate; a second gate insulating film formed on a first pMOS transistor region in the substrate; a third gate insulating film formed on a second nMOS transistor region in the substrate; and a fourth gate insulating film formed on a second pMOS transistor region in the substrate. The first through fourth gate insulating films contain nitrogen. Each of the third and fourth gate insulating films has a thickness smaller than that of each of the first and second gate insulating films. The first gate insulating film has a nitrogen concentration peak at the interface between the first gate insulating film and the substrate. Each of the second, third and fourth gate insulating films has a nitrogen concentration peak only near an associated one of gate electrodes respectively formed thereon.
REFERENCES:
patent: 6727146 (2004-04-01), Murakami et al.
patent: 2005/0242398 (2005-11-01), Chen et al.
patent: 2003-347423 (2003-12-01), None
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