Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-05-29

2007-05-29

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257S534000, C438S238000, C438S243000, C438S244000

Reexamination Certificate

active

11001044

ABSTRACT:
A semiconductor device includes a first insulating film having a cavity, a second insulating film formed on the first insulating film and having an opening exposing the cavity, a lower electrode of a concave shape in cross section formed on the bottom and sides of the cavity, a capacitive insulating film formed on the lower electrode, and an upper electrode formed on the capacitive insulating film. The diameter of the cavity of the first insulating film is larger than that of the opening of the second insulating film, and the end of the second insulating film located on the sides of the opening is formed in an eaves-like part to project like eaves inwardly beyond the sides of the first insulating film.

REFERENCES:
patent: 6627938 (2003-09-01), Kwok et al.
patent: 10-079478 (1998-03-01), None
patent: 10-144880 (1998-05-01), None

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