Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-13
2000-11-14
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257321, H01L 29788
Patent
active
061473790
ABSTRACT:
The nonvolatile semiconductor memory device of the invention includes: a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first and second surface regions; a channel region formed in the first surface region of the semiconductor substrate; a source region and a drain region which are formed in the surface of the semiconductor substrate so as to interpose the channel region therebetween; a first insulating film formed on the surface of the semiconductor substrate; a floating gate formed on the first insulating film; and a control gate capacitively coupled to the floating gate via a second insulating film. The first surface region is an upper surface of an epitaxially grown layer formed on the second surface region. The drain region includes: a low-concentration impurity layer formed in the second surface region and having one end extending toward the step side region; and a high-concentration impurity layer connected to the low-concentration impurity layer and formed in a region distant from the channel region. An impurity concentration of the low-concentration impurity layer is lower than that of the high-concentration impurity layer. The floating gate covers the step side region and at least a part of the low-concentration impurity layer via the first insulating film.
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Akamatsu Kaori
Hori Atsushi
Kato Jun-ichi
Odanaka Shinji
Ogura Seiki
HALO LSI Design and Devices Technologies Inc.
Hardy David
Matsushita Electric - Industrial Co., Ltd.
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