Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-06-06

2006-06-06

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S372000, C257S506000

Reexamination Certificate

active

07057238

ABSTRACT:
A semiconductor device and a method for fabricating the same are provided. The provided semiconductor device includes a field oxide layer formed in a semiconductor substrate to define an active region; gate structures formed on the active region; source/drain junctions formed on either side of the gate structures on the semiconductor substrate; a channel silicon layer arranged under the gate insulating layer to operate as a channel for connecting sources and drains; and buried junction isolation insulating layers under the channel silicon layer. The buried junction isolation insulating layers isolate source/drain junction regions of a MOS transistor, so that a short circuit in a bulk region under the channel of a transistor due to the high-integration of the device can be prevented.

REFERENCES:
patent: 4394182 (1983-07-01), Maddox, III
patent: 4885618 (1989-12-01), Schubert et al.
patent: 6084271 (2000-07-01), Yu et al.
patent: 6198141 (2001-03-01), Yamazaki et al.
patent: 6218714 (2001-04-01), Yamazaki
patent: 6617647 (2003-09-01), Yamazaki
patent: 6670260 (2003-12-01), Yu et al.
patent: 9045904 (1997-02-01), None
patent: 409045904 (1997-02-01), None
Computerized Translation of the item on IDS filed Jun. 24, 2004, i.e., “Semiconductor Devices and Its Manufacture”, N. Takenaka, Japanese Patent No. JP409045904A.
English language Abstract of Japanese Patent No. JP9045904.

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3705667