Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-08-15

2006-08-15

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S103000

Reexamination Certificate

active

07091524

ABSTRACT:
A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.

REFERENCES:
patent: 6447604 (2002-09-01), Flynn et al.
patent: 6566231 (2003-05-01), Ogawa et al.
patent: 2001/0029086 (2001-10-01), Ogawa et al.
patent: 2003/0205721 (2003-11-01), Nishii et al.
patent: P2001-267555 (2001-09-01), None
Ok-Hyun Nam, et al., “Lateral Epitaxy of Low Defect Density GaN Layers Via Organometallic Vapor Phase Epitaxy”, American Institute of Physics, Applied Physics Letters 71 (18), pp. 2638-2640, Nov. 3, 1997.

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