Active solid-state devices (e.g. – transistors – solid-state diode – Mosfet type gate sidewall insulating spacer
Reexamination Certificate
2006-04-25
2006-04-25
Pham, Hoai (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Mosfet type gate sidewall insulating spacer
C257S369000, C257S213000, C438S199000, C438S303000
Reexamination Certificate
active
07034407
ABSTRACT:
A substrate11consists of a semiconductor layer12as an element formation region and an STI13as an isolation region. A gate dielectric15is provided on the semiconductor layer12, and a gate electrode14is provided to extend from the top of the gate dielectric15to the top of the STI13. A sidewall30for covering the sides of the gate electrode14is provided to extend across the top of the semiconductor layer12to the tops of regions of the STI13adjacent to the outer edges of the semiconductor layer12. The sidewall30is employed as an ion implantation mask for forming high-concentration impurity diffusion layers16each serving as a source/drain region.
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Imade Masahiro
Kadowaki Tadashi
Umimoto Hiroyuki
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Pham Hoai
Tran Thanh Y.
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