Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1995-06-14

1997-09-23

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257189, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

056708009

ABSTRACT:
A semiconductor device includes a layer 16 of intermetallic compound layer 16 formed on a base substrate 10. The intermetallic compound is a ternary intermetallic compound 16 mixing a set amount of In with one of CoGa, NiGa, FeGa, CoAl, NiAl and FeAl . Twice of a lattice constant of the ternary intermetallic compound 16 is substantially equal to a lattice constant of a compound semiconductor forming the base substrate 10. Accordingly, the layer 16 of the intermetallic compound free from misfit dislocations can be formed on the semiconductor substrate or the semiconductor layer, and semiconductor elements can be formed on the wiring layer of the intermetallic compound layer 16.

REFERENCES:
patent: 5187116 (1993-02-01), Kitagawa et al.
patent: 5431751 (1995-07-01), Okochi et al.
N. Tabatabaie et al., "Negative differential resistance in AlAs/NiAl/AlAs Heterostructures: Evidence for size quantization in metals", Appl. Phys. Lett. 53 (1988) pp. 2528-2530.
J.W. Matthews et al., "Defects in epitaxial multilayers", J. Crystal Growth 27 (1974) pp. 118-125.
Electronics Letters, 22nd Jul. 1993. vol. 29 No. 15, pp. 1346-1347.
Jpn. J. Appl. Phys. vol. 32 (1993) pp. 1919-1922.

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