Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-02-08

2005-02-08

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Forming schottky junction

Using platinum group metal

C438S580000, C438S575000, C438S570000

Reexamination Certificate

active

06852612

ABSTRACT:
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.

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Notice of reasons of rejection (Dated May 21, 2002).

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