Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-01
2005-03-01
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S758000, C257S382000, C257S773000
Reexamination Certificate
active
06861694
ABSTRACT:
The semiconductor device including a memory cell region and a peripheral circuit region on a semiconductor substrate10comprises a transfer transistor formed in the memory cell region, a capacitor constituted by a storage electrode46connected to one of diffused layers20of the transfer transistor and formed of a first conducting layer, a dielectric film52covering a sidewall of the storage electrode46, and an opposed electrode56formed on the dielectric film52; a conducting plug formed of the first conducting layer and connected to the peripheral circuit region of the semiconductor substrate10; and a first interconnection62electrically connected to the conducting plug48.
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Fujitsu Limited
Prenty Mark V.
Westerman Hattori Daniels & Adrian LLP
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