Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-15
2005-03-15
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S336000, C257S368000, C257S369000, C257S408000, C257S345000
Reexamination Certificate
active
06867458
ABSTRACT:
Provided is a semiconductor device having a source region formed of a semiconductor, a drain region formed of a semiconductor of the same conductive type as that of the source region, a channel region formed of a semiconductor between the source region and the drain region, a gate insulating film provided on the channel region, and a gate electrode provided on the gate insulating film and formed with a P-N junction including a P-type semiconductor region and an N-type semiconductor region. At this time, the P-type semiconductor region and the N-type semiconductor region of the P-N junction of the gate electrode are electrically insulated.
REFERENCES:
patent: 4745079 (1988-05-01), Pfiester
patent: 5144390 (1992-09-01), Matloubian
patent: 5371391 (1994-12-01), Sato
patent: 5372960 (1994-12-01), Davies et al.
patent: H1435 (1995-05-01), Cherne et al.
patent: 5438007 (1995-08-01), Vinal et al.
patent: 5466958 (1995-11-01), Kakumu
patent: 5856693 (1999-01-01), Onishi
patent: 5977591 (1999-11-01), Fratin et al.
patent: 6097070 (2000-08-01), Mandelman et al.
patent: 6387739 (2002-05-01), Smith, III
patent: 6413829 (2002-07-01), Yu
patent: 6555446 (2003-04-01), Unnikrishnan
patent: 60-98675 (1985-06-01), None
Kang Donghee
Vu Quang
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3420237