Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1995-11-27

1998-03-10

Niebling, John

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438406, H01L 21302

Patent

active

057260893

ABSTRACT:
A method for fabricating a semiconductor device having a bonded wafer structure capable of reducing crystal defect in a power element forming region thereof is disclosed A recess is formed in a control circuit element forming region of a first n- silicon substrate, then filled with a silicon oxide film and subjected to grinding and polishing to provide a mirror-surface. An n- epitaxial layer is formed on the surface of a second n+ silicon substrate, then the surface of the epitaxial layer is coupled to the surfaces of the silicon oxide film and second circuit region of the first substrate and heat-treated to be bonded thereto.

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