Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1996-06-28

1998-03-10

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, 438294, 438412, 438770, H01L 21265

Patent

active

057260826

ABSTRACT:
A semiconductor device having a silicon-on-insulator structure, and a method for fabricating the semiconductor device, wherein a thick silicon oxide film is formed on each side wall of an active silicon substrate, thereby obtaining an increased threshold voltage at the edge of the active silicon substrate. The semiconductor device includes a first silicon substrate, a first silicon oxide film formed over the first silicon substrate, a second silicon substrate on the first silicon oxide film, second silicon oxide films, respectively disposed on opposite side walls of the second silicon substrate, a gate oxide film formed on the second silicon substrate, a gate electrode formed over the gate oxide film, and source/drain impurity diffusion regions, respectively formed in portions of the second silicon substrate disposed at both sides of the gate electrode. An impurity doped region having a conduction type opposite to that of the second silicon substrate, is defined between each side wall of the second silicon substrate and each corresponding second silicon oxide film in order to obtain an increased threshold voltage. Thus, the present invention easily controls threshold voltage, thereby improving in production yield.

REFERENCES:
patent: 4183134 (1980-01-01), Oehler
patent: 4950618 (1990-08-01), Sundaresan
patent: 5130264 (1992-07-01), Troxell
patent: 5283456 (1994-02-01), Hsieh et al.
patent: 5470763 (1995-11-01), Hamada
patent: 5482871 (1996-01-01), Pollack
patent: 5496750 (1996-03-01), Moslehi

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